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| Item number: 2794E-1779695 Manufacturer no.: TP2540N8-G EAN/GTIN: n/a |
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| This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Low threshold (-2.4V max.) High input impedance Low input capacitance (60pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 125 mA | Maximum Drain Source Voltage: | 400 V | Package Type: | TO-243AA | Series: | TP2540 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 30 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.4V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 1.6 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 4.6mm |
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| Other search terms: 1779695, Semiconductors, Discrete Semiconductors, MOSFETs, Microchip, TP2540N8G |
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