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| Item number:
2794E-1769786 Manufacturer no.:
UV-100L EAN/GTIN:
n/a |
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| OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.Product Applications Pollution Monitoring Medical Instrumentation UV Exposure Meters Spectroscopy Water Purification Fluorescence Product Features Inversion series: 100% Internal QE Ultra High Shunt Resistance Excellent UV Response More information: | | Wavelength of Peak Sensitivity: | 254nm | Package Type: | Low Profile | Amplifier Function: | No | Mounting Type: | Through Hole | Number of Pins: | 3 | Diode Material: | Si | Minimum Wavelength Detected: | UV-100L | Maximum Wavelength Detected: | 254nm | Length: | 24.76mm | Height: | 4.826mm | Diameter: | 25.4mm | Peak Photo Sensitivity: | 0.14A/W | Series: | UV | Shunt Resistance: | 10000KΩ | Typical Rise Time: | 5.9ns |
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| Other search terms: 1769786, Displays & Optoelectronics, Optocouplers & Photodetectors, OSI Optoelectronics, UV100L |
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