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N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220FM ROHM R6007ENX / 1720548


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Product information
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Item number:
     2794E-1720548
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     R6007ENX
EAN/GTIN:
     5059043538488
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.Low on-resistance. Fast switching speed. Gate-source voltage (VGSS) guaranteed to be ±20V. Drive circuits can be simple. Parallel use is easy. Pb-free lead plating
More information:
Channel Type:
N
Maximum Continuous Drain Current:
7 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220FM
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
1.2 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
46 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±30 V
Length:
10.3mm
Maximum Operating Temperature:
+150 °C
Other search terms: 1720548, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, R6007ENX
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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