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N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120 / 1688966


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Item number:
     2794E-1688966
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     SCT30N120
EAN/GTIN:
     5059042333275
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics. Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
45 A
Maximum Drain Source Voltage:
1200 V
Package Type:
HiP247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
100 mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-10 V, +25 V
Length:
15.75mm
Maximum Operating Temperature:
+200 °C
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: 1688966, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCT30N120
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Prices: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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