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N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1 / 1685906


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Product information
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Item number:
     2794E-1685906
Manufacturer:
     Infineon
Manufacturer no.:
     IPB60R160P6ATMA1
EAN/GTIN:
     5059043401287
Search terms:
Power factor correction
MOSFET
MOSFET transistor
power factor correction
Infineon CoolMOS™E6/P6 series Power MOSFET. The Infineon range of CoolMOS ;sup>™ ;/sup>E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
23.8 A
Maximum Drain Source Voltage:
650 V
Package Type:
D2PAK (TO-263)
Series:
CoolMOS P6
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
160 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Minimum Gate Threshold Voltage:
3.5V
Maximum Power Dissipation:
176 W
Maximum Gate Source Voltage:
-30 V, +30 V
Length:
10.31mm
Maximum Operating Temperature:
+150 °C
Other search terms: 1685906, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB60R160P6ATMA1
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1 packet contains 1,000 pieces (£ 1.436* per piece)
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