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| Item number:
2794E-1660942 Manufacturer no.:
STB18N60DM2 EAN/GTIN:
5059042263589 |
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| N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | MDmesh DM2 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 290 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 90 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -25 V, +25 V | Length: | 9.35mm |
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| Other search terms: 1660942, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STB18N60DM2 |
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