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| Item number:
2794E-1611106 Manufacturer no.:
MOC8101X EAN/GTIN:
5059041254861 |
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| The MOC8101/2/3/4/G series are constructed from a Gallium Arsenide Infrared Emitting Diode optically coupled to a monolithic silicon photo transistor detector. They have been designed and specified to meet the requirements of switchmode power supplies and other applications requiring very closely matched current transfer ratios (CTR), linearity and stable performance over the temperature range. The internal base-to-pin 6 connection has been eliminated for improved noise immunity. Surface Mount Option Available.Convenient plastic Dual-In-Line Package. High Input-Output Isolation Guaranteed 3750 Vac(rms). Special lead form available for 8 mm minimum creepage distance between input and output solder pads. More information: | | Mounting Type: | Through Hole | Output Device: | NPN Phototransistor | Maximum Forward Voltage: | 1.5V | Number of Channels: | 1 | Number of Pins: | 6 | Package Type: | DIP | Input Current Type: | AC | Typical Rise Time: | 2 (Response Time)µs | Maximum Input Current: | 60 mA | Isolation Voltage: | 5300 (Minimum) Vrms | Typical Fall Time: | 2 (Response Time)µs | Series: | MOC8101 |
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| Other search terms: 1611106, Displays & Optoelectronics, Optocouplers & Photodetectors, Optocouplers, Isocom, MOC8101X |
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