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Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole / 1248810


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Item number:
     2794E-1248810
Manufacturer:
     Infineon
Manufacturer no.:
     IKW50N60H3FKSA1
EAN/GTIN:
     5059043808604
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
More information:
Maximum Continuous Collector Current:
100 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
333 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Energy Rating:
2.55mJ
Gate Capacitance:
2960pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Other search terms: Transistor, Transistors, power transistor, 1248810, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW50N60H3FKSA1
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Rights to return this item: 2794 East Midlands NN17
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