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| Item number:
2794E-1241719 Manufacturer no.:
FQD11P06TM EAN/GTIN:
5059042547399 |
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| Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 9.4 A | Maximum Drain Source Voltage: | 60 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 185 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 2.5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Other search terms: 1241719, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FQD11P06TM |
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