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Infineon IKW40N65H5FKSA1 IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole / 1107779


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Item number:
     2794E-1107779
Manufacturer:
     Infineon
Manufacturer no.:
     IKW40N65H5
EAN/GTIN:
     5059043405322
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
More information:
Maximum Continuous Collector Current:
74 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
250 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Energy Rating:
0.51mJ
Gate Capacitance:
2500pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Other search terms: Transistor, Transistors, power transistor, 1107779, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW40N65H5
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