Transistor modules MOSFET (330 items)

Attention! This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity. Manufacturer: GeneSiC SEMICONDUCTOR Case: SOT...

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This train...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 75A On-state resistance: 49mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 82A On-state resistance: 49mΩ Power dissipation: 9...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 650V Drain current: 78A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 86A On-state resistance: 33mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 600V Drain current: 90A On-state resistance: 56mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 205ns Drain-source voltage: 850V Drain current: 110A On-state resistance: 33mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 220ns Drain-source voltage: 650V Drain current: 108A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A On-state resistance: 10mΩ Polarisation: unipolar Electrical mounting: scre...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 112A On-state resistance: 39mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 200V Drain current: 115A On-state resistance: 18mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 110A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 650V Drain current: 145A On-state resistance: 17mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: ...