Transistor modules MOSFET (78 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 82A On-state resistance: 49mΩ Power dissipation: 9...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 650V Drain current: 78A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 205ns Drain-source voltage: 850V Drain current: 110A On-state resistance: 33mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 220ns Drain-source voltage: 650V Drain current: 108A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A On-state resistance: 10mΩ Polarisation: unipolar Electrical mounting: scre...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 112A On-state resistance: 39mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 650V Drain current: 145A On-state resistance: 17mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 135ns Drain-source voltage: 250V Drain current: 146A On-state resistance: 7.4mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 11mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 168A On-state resistance: 12.9mΩ Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 570mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 300V Drain current: 192A On-state resistance: 14.5mΩ Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 300V Drain current: 210A On-state resistance: 4.6mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 128ns Drain-source voltage: 200V Drain current: 160A On-state resistance: 6.2mΩ Power dissipation:...