SRAM (160 items)

Memory Size = 1Mbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns Address Bus Width = 8bit Low Power = Yes Mounting Type = Surf...

Asynchronous Static RAM Memory, Cypress Semiconductor

Memory Size = 2Mbit Organisation = 128k x 16 Number of Words = 128k Number of Bits per Word = 16bit Maximum Random Access Time = 45ns

Memory Size = 2Mbit Organisation = 128k x 16 Number of Words = 128k Number of Bits per Word = 16bit Maximum Random Access Time = 45ns

Memory Size = 2Mbit Organisation = 256k x 8 Number of Words = 256k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns

Memory Size = 2Mbit Organisation = 256k x 8 Number of Words = 256k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns

Memory Size = 8Mbit Organisation = 512k x 16, 1M x 8 Number of Words = 512k Number of Bits per Word = 16, 8bit Maximum Random Access Time = 45ns

Memory Size = 8Mbit Organisation = 512k x 16, 1M x 8 Number of Words = 512k Number of Bits per Word = 16, 8bit Maximum Random Access Time = 45ns

Memory Size = 2Mbit Organisation = 256k x 8 Number of Words = 256k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 2Mbit Organisation = 256k x 8 Number of Words = 256k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 2Mbit Organisation = 128k x 16 Number of Words = 128k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns

Memory Size = 4Mbit Organisation = 512k x 8 Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 4Mbit Organisation = 512k x 8 Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 1Mbit Organisation = 128k x 8 Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 1Mbit Organisation = 128k x 8 Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 9Mbit Organisation = 256k x 36 Number of Words = 256k Number of Bits per Word = 36bit Maximum Random Access Time = 2.8ns

Memory Size = 9Mbit Organisation = 256k x 36 Number of Words = 256k Number of Bits per Word = 36bit Maximum Random Access Time = 2.8ns

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

The Cypress CY14X101PA combines a 1-Mbit nv SRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128K words of 8 bits each. The ...

Memory Size = 1Mbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 15ns Clock Frequency = 104MHz Low Power = Yes Timing Type = Synchr...

Very high speed: 45 ns Temperature range Industrial: –40 °C to +85 °C Wide voltage range: 2.20 V to 3.60 V Ultra low standby power Typical standby current: 1 A Maximum standby current: 7 A (Industr...

Memory Size = 4Mbit Organisation = 256k x 16 bit Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 45ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power ...

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor. The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifi...

Memory Size = 4Mbit Organisation = 512k x 8 bit Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns Address Bus Width = 8bit Clock Frequency = 1MHz Low Power = Y...

Very high speed: 45 ns Voltage range: 4.5 V to 5.5 V Pin compatible with CY62148B Ultra low standby power Typical standby current: 1 μA Maximum standby current: 7 μA (Industrial) Ultra low active p...

Memory Size = 1Mbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns Address Bus Width = 8bit Clock Frequency = 1MHz Timing Type =...

Pin- and function-compatible with CY7C1018CV33 High speed tAA = 10 ns Low Active Power ICC = 60 mA @ 10 ns Low CMOS Standby Power ISB2 = 3 mA 2.0V Data retention Automatic power-down when deselecte...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Timing Type ...

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state whe...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Timing Type ...

This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) ...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Timing Type = Asynchronous Mounting Type = Surface Mount Pack...

Temperature ranges Industrial: –40 °C to 85 °C Automotive-A: –40 °C to 85 °C Pin-and function-compatible with CY7C1021CV33 High speed tAA = 10 ns Low active power ICC = 60 mA @ 10 ns Low CMOS stand...

High speed tAA = 10 ns/15 ns Embedded ECC for single-bit error correction[1, 2] Low active and standby currents Active current: ICC = 38 mA typical Standby current: ISB2 = 6 mA typical Operating vo...

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power = ...

High speed tAA = 10 ns Temperature range Automotive-E: -40°C to 125°C Automotive-A: -40°C to 85°C Embedded ECC for single-bit error correction[1, 2] Low active and standby currents Active current I...

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power = Ye...

Memory Size = 4Mbit Organisation = 256k x 16 bit Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power ...

High speed tAA = 10 ns / 15 ns Low active and standby currents Active current: ICC = 38-mA typical Standby current: ISB2 = 6-mA typical Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and...

CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while p...

Memory Size = 4Mbit Organisation = 512k x 8 Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 16Mbit Organisation = 1M x 16 bit Number of Words = 1 M Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power ...

High speed tAA = 10 ns Embedded error-correcting code (ECC) for single-bit error correction Low active power ICC = 90 mA typical Low CMOS standby power ISB2 = 20 mA typical Operating voltages of 3....

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The...

Memory Size = 16Mbit Organisation = 1M x 16 bit Number of Words = 1M Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power =...

High speed tAA = 10 ns/15 ns Embedded error-correcting code (ECC) for single-bit error correction Low active and standby current ICC = 90 mA typical ISB2 = 20 mA typical Operating voltage range: 1....

Memory Size = 16Mbit Organisation = 512k x 16 bit Number of Words = 512k Number of Bits per Word = 32bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Pow...

Pin- and function-compatible with CY7C109B/CY7C1009B High speed tAA = 10 ns Low active power ICC = 80 mA at 10 ns Low CMOS standby power ISB2 = 3 mA 2.0 V Data Retention Automatic power-down when d...

Memory Size = 1Mbit Organisation = 128k x 8 Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Temperature range –40 °C to 85 °C Pin and function compatible with CY7C199C High speed TAA = 10 ns Low active power ICC = 80 mA at 10 ns Low CMOS standby power ISB2 = 3 mA 2.0 V data retention Auto...

Memory Size = 4Mbit Organisation = 256K x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 20 ns, 25 ns, 45 ns

Memory Size = 4Mbit Organisation = 256K x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 20 ns, 25 ns, 45 ns

Memory Size = 8Mbit Organisation = 512K x 16 Number of Words = 512k Number of Bits per Word = 16bit Maximum Random Access Time = 20 ns, 25 ns, 45 ns

Memory Size = 8Mbit Organisation = 512K x 16 Number of Words = 512k Number of Bits per Word = 16bit Maximum Random Access Time = 20 ns, 25 ns, 45 ns

Memory Size = 1Mbit Organisation = 64 K x 16 Number of Words = 64k Number of Bits per Word = 16bit

Memory Size = 1Mbit Organisation = 64 K x 16 Number of Words = 64k Number of Bits per Word = 16bit

Memory Size = 1Mbit Organisation = 128K x 8 Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns

Memory Size = 1Mbit Organisation = 128K x 8 Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns

The Cypress Semiconductor CY62128E series is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. ...

Memory Size = 1Mbit Organisation = 128k x 8

Asynchronous Static RAM Memory, Cypress Semiconductor

Asynchronous Static RAM Memory, Cypress Semiconductor

Memory Size = 1024kbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns

The Cypress CY62128E is a high performance CMOS static RAM which features advanced circuit design to provide ultra low active current. This feature proves ideal in providing More Battery Life™ (MoB...

Memory Size = 1Mbit Organisation = 128K x 8 Number of Words = 128k Number of Bits per Word = 8bit

Memory Size = 1Mbit Organisation = 128K x 8 Number of Words = 128k Number of Bits per Word = 8bit

Memory Size = 1024kbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns Address Bus Width = 8bit Clock Frequency = 1MHz Low Power ...

The Cypress CY62128EV30 is a high performance CMOS static RAM module which features advanced circuit design to provide ultra low active current. This feature proves ideal in providing More Battery ...

Memory Size = 2Mbit Organisation = 128K x 16 Number of Words = 128k Number of Bits per Word = 16bit