The Infineon EiceDRIVER™ 25 V single-channel low-side non-inverting gate driver for IGBT with typical 2.6 A source and sink currents in a tiny 6-lead PG-SOT23 package.-0.246 V over-current threshol...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Maximum Continuous Collector Current = 6.5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 53.6 W Package Type = PG-TO252 Channel Type = N...
The Infineon IGD06N60T is very soft, fast recovery anti-parallel emitter controlled diode and has high ruggedness, temperature stable behaviour. It has low switching loss.Very low VCE(sat) 1.5 V (t...
Maximum Continuous Collector Current = 2.2 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 1 Package Type = PG-SOT223-3
Maximum Continuous Collector Current = 4 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20.0V Maximum Power Dissipation = 42 W Package Type = TO-251
Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 30 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
Maximum Continuous Collector Current = 5.7 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 1 Package Type = PG-SOT223-3
Maximum Continuous Collector Current = 11.9 A Maximum Collector Emitter Voltage = 11.4 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 500 mW Package Type = PG-SOT23-6-3 Channel Ty...
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range incl...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Maximum Continuous Collector Current = 4 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20.0V Maximum Power Dissipation = 42 W Package Type = TO-251
Maximum Continuous Collector Current = 7.5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 6.8 W Package Type = PG-SOT223-3
Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
Maximum Continuous Collector Current = 6.5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 53.6 W Package Type = PG-TO252 Channel Type = N...
Maximum Continuous Collector Current = 5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 82 W Package Type = TO-252
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
Maximum Continuous Collector Current = 153 A Maximum Collector Emitter Voltage = 25 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TDSON-8 Mounting Type =...
Maximum Continuous Collector Current = 12 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 88 W Package Type = PG-TO252 Channel Type = N Pi...
Maximum Continuous Collector Current = 8 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 7.2 W Package Type = PG-SOT223-3
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range incl...
Maximum Continuous Collector Current = 8 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 42 W Package Type = PG-TO-220-3 Mounting Type ...
Maximum Continuous Collector Current = 8 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 42 W Package Type = PG-TO-220-3 Mounting Type ...
Maximum Continuous Collector Current = 5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 82 W Package Type = TO-252
Maximum Continuous Collector Current = 24 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 3 Package Type = PG-TO-220-3
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
Maximum Continuous Collector Current = 1899-12-31 06:00:00 Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 88 W Package Type = TO-263 Mount...