Bipolar Transistors (169 items)

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Transistor Type = NPN Maximum DC Collector Current = 35 mA Maximum Collector Emitter Voltage = 2.25 V Package Type = TSFP Mounting Type = Surface Mount Maximum Power Dissipation = 75 mW Transistor ...

The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo)

Transistor Type = NPN Maximum DC Collector Current = 55 mA Maximum Collector Emitter Voltage = 2.25 V Package Type = SOT-343 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

Transistor Type = NPN Maximum DC Collector Current = 120 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-89 Mounting Type = Surface Mount

Transistor Type = NPN Maximum DC Collector Current = 120 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-89 Mounting Type = Surface Mount

NPN Silicon RF Transistor

High maximum RF input power PRFin,max = 18 dBm

Transistor Type = NPN Maximum DC Collector Current = 250 mA Maximum Collector Emitter Voltage = 5 V Package Type = SOT-89 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

NPN Silicon RF Transistor

RF Bipolar Transistors, Infineon

Transistor Type = NPN Maximum DC Collector Current = 20 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-23 Mounting Type = Surface Mount Number of Elements per Chip = 1

Transistor Type = NPN Maximum DC Collector Current = 20 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-23 Mounting Type = Surface Mount Number of Elements per Chip = 1

Maximum DC Collector Current = 20 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-323 Mounting Type = Surface Mount Pin Count = 3